| Nanoelectronic Modeling Lecture 01: Overview |
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The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum...
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| Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background |
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Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these...
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| Nanoelectronic Modeling Lecture 03: nanoHUB.org - Online Simulation and More |
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This presentation provides a brief overview of the nanoHUB capabilites, compares it to static web page delivery, highlights its technology basis, and provides a vision for future...
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| Nanoelectronic Modeling Lecture 04: nanoHUB.org - Impact on Education |
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This presentation will provide a few highlights of how nanoHUB.org is being used in education and what kind of impact it has had so far. Tools and seminars are indeed being used as instructional...
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| Nanoelectronic Modeling Lecture 05: nanoHUB.org - Impact on Research |
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Impact on research is often measured by the number of publications in the scientific literature. The nanoHUB support team has identified 430 citations to nanoHUB.org and/or nanoHUB tools and...
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| Nanoelectronic Modeling Lecture 06: nanoHUB.org - Rappture Toolkit |
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The rapid deployment of over 150 simulation tools in just over 4 years has been enabled by 2 critical software developments: 1) Maxwell’s Daemon: a middleware that can deploy at a production level...
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| Nanoelectronic Modeling Lecture 07: Introduction to Bandstructure Engineering I |
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This presentation serves as a reminder about basic quantum mechanical principles without any real math. The presentation reviews critical properties of classical systems that can be described as...
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| Nanoelectronic Modeling Lecture 08: Introduction to Bandstructure Engineering II |
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This presentation provides a brief overview of the concepts of bandstructure engineering and its potential applications to light detectors, light emitters, and electron transport devices. Critical...
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| Nanoelectronic Modeling Lecture 09: Open 1D Systems - Reflection at and Transmission over 1 Step |
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One of the most elemental quantum mechanical transport problems is the solution of the time independent Schrödinger equation in a one-dimensional system where one of the two half spaces has a...
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| Nanoelectronic Modeling Lecture 10: Open 1D Systems - Transmission through & over 1 Barrier |
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Tunneling and interference are critical in the understanding of quantum mechanical systems. The 1D time independent Schrödinger equation can be easily solved analytically in a scattering matrix...
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| Nanoelectronic Modeling Lecture 11: Open 1D Systems - The Transfer Matrix Method |
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The transfer matrix approach is analytically exact, and “arbitrary” heterostructures can apparently be handled through the discretization of potential changes. The approach appears to be quite...
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| Nanoelectronic Modeling Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling |
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This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a...
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| Nanoelectronic Modeling: Exercises 1-3 - Barrier Structures, RTDs, and Quantum Dots |
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| Nanoelectronic Modeling Lecture 14: Open 1D Systems - Formation of Bandstructure |
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The infinite periodic structure Kroenig Penney model is often used to introduce students to the concept of bandstructure formation. It is analytically solvable for linear potentials and shows...
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| Nanoelectronic Modeling Lecture 16: Introduction to RTDs - Realistic Doping Profiles |
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Realistic RTDs need extremely high doping to provide enough carriers for high current densities. However, Impurity scattering can destroy the RTD performance. The dopants are therefore typically...
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| Nanoelectronic Modeling Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter |
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Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete...
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| Nanoelectronic Modeling Lecture 18: Introduction to RTDs - Quantum Charge Self-Consistency (Hartree) |
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In this semi-classical charge and potential model the quantum mechanical simulation is performed once and the quantum mechanical charge is in general not identical to the semi-classical charge.
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| Nanoelectronic Modeling Lecture 19: Introduction to RTDs - Asymmetric Structures |
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This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this set-up...
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| Nanoelectronic Modeling Lecture 20: NEGF in a Quasi-1D Formulation |
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This lecture will introduce a spatial discretization scheme of the Schrödinger equation which represents a 1D heterostructure like a resonant tunneling diode with spatially varying band edges and...
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| Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF |
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| Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF |
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| Nanoelectronic Modeling Lecture 21: Recursive Green Function Algorithm |
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The Recursive Green Function (RGF) algorithms is the primary workhorse for the numerical solution of NEGF equations in quasi-1D systems. It is particularly efficient in cases where the device is...
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| Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights |
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| Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions |
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| Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering |
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| Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects |
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(quantitative RTD modeling at room temperature)
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| Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs |
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| Nanoelectronic Modeling Lecture 26: NEMO1D - |
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| Nanoelectronic Modeling Lecture 27: NEMO1D - |
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| Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements |
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| Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool |
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| Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots |
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| Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD |
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| Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk |
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| Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots |
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| Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires |
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| Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors |
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This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex...
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| Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness |
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| Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT |
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