A numerical simulation of spin-dependent quantum transport for a spin field effect transistor
(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both
spin relaxation in the channel and the tunneling barrier between the source/drain and the channel.
Account for these factors permits setting more realistic performance limits for the transistor,
especially the magnetoresistance, which is found to be lower compared to earlier predictions. The
interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of
the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to
explore the tunneling barrier design issues.
Yunfei Gao got his BSEE degree in Shanghai Jiao Tong University,China in June 2006. He is now working in Mark Lundstrom group in Purdue University as a research assistant.
in collaboration with Tony Low, Charles Augustine
Dmitri Nikonov, Kaushik Roy, and Mark Lundstorm.
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