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Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

This presentation demonstrates the importance of long-range strain in quantum dots

  • Numerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the buffer
  • Controlled overgrowth can tune the electron energies in the system

Learning Objectives:

  1. Strain is the source of the creation of the InAs QDs on GaAs
  2. Strain is a long range phenomenon
  3. Strain reaches further vertically than horizontally
  4. Quantum dots will grow on top of each other
  5. Electron wavefunctions are confined to the central quantum dots and can be computed in a smaller domain

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck (2010), "Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots," https://nanohub.org/resources/9270.

    BibTex | EndNote

Time

Location

Università di Pisa, Pisa, Italy

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