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Optimization of Transistor Design for Carbon Nanotubes

By Jing Guo

University of Florida

Published on


We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the CNTFET operates like a non-conventional Schottky barrier transistor. Design optimization for significantly improving the off-state is explored. We have also assessed how the CNTFET compares to the state-of-the-art Si MOSFET and the potential of CNTFETs for high-frequency applications.

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Researchers should cite this work as follows:

  • Jing Guo (2006), "Optimization of Transistor Design for Carbon Nanotubes,"

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