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MuGFET
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
Version 1.1.6 - published on 05 Mar 2023
doi:10.21981/GVN0-X289 cite this
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Britney Rickman @ on
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For some kinds of device regimes, utilizing classical simulation methods rather than quantum methods has some benefits. In addition to being substantially faster than quantum ballistic simulations, drift and diffusion simulations also have a good fit to experimental data.
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