MuGFET

Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches

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Version 1.1.6 - published on 05 Mar 2023

doi:10.21981/GVN0-X289 cite this

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    Britney Rickman

    4.0 out of 5 stars

    For some kinds of device regimes, utilizing classical simulation methods rather than quantum methods has some benefits. In addition to being substantially faster than quantum ballistic simulations, drift and diffusion simulations also have a good fit to experimental data.

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