ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation

Alireza Faghaninia; Joel Ager; Cynthia S Lo

doi:10.21981/D3HM52M0S

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ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation

By Alireza Faghaninia¹; Joel Ager (editor)²; Cynthia S Lo (editor)¹

1. Washington University in St. Louis 2. University of California - Berkeley

ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.

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Version 2.2.4 - published on 27 Jan 2016

doi:10.4231/D3HM52M0S cite this

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Non-affiliated authors

Ming Ke, Huu Nguyen, Hang Fan, Man Li, Huan Wu, Yongjie Hu, (2020), "Complementary Doping Of Van Der Waals Materials Through Controlled Intercalation For Monolithically Integrated Electronics", Nano Research, Springer, 13: pg: 2369-1375, 1998-0124, (DOI: https://doi.org/10.1007/s12274-020-2634-y)
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