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By Neophytos Neophytou1, Shaikh S. Ahmed2, POLIZZI ERIC3, Gerhard Klimeck4, Mark Lundstrom4

1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

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Version 1.6.3 - published on 10 Sep 2015

doi:10.4231/D3222R70F cite this

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View All Supporting Documents, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.