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CNT Mobility

By Yang Zhao1, Albert Liao1, Eric Pop1

1. University of Illinois at Urbana-Champaign

Simulate field effect carrier mobility in back-gated CNTFET devices at low field

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Version 1.1 - published on 12 Oct 2011

doi:10.4231/D3Z31NN32 cite this

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Abstract

CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport.

Credits

Yang Zhao, Albert Liao, Eric Pop

Publications

Multiband Mobility in Semiconducting Carbon Nanotubes Y. Zhao, A. Liao, E. Pop, IEEE Elec. Device Lett. 30, 1078 (2009) pdf

Cite this work

Researchers should cite this work as follows:

  • Yang Zhao; Albert Liao; Eric Pop (2011), "CNT Mobility," https://nanohub.org/resources/cntmob. (DOI: 10.4231/D3Z31NN32).

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