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Citations Non-affiliated (1) | Affiliated (0)
S. O'Leary; Brian Foutz; Michael Shur; Lester Eastman (2006), "Steady-State and Transient Electron Transport Within the III-V Nitride Semiconductors, GaN, AlN, and InN: A Review," Journal Of Materials Science: Materials In Electronics, Springer, 17, 2: pg. 87-126, 02. (DOI: 10.1007/s10854-006-5624-2).