Carrier Statistics Lab

Calculate the electron & hole density in semiconductors

Launch Tool

You must login before you can run this tool.

Version 2.3 - published on 29 Jul 2014

doi:10.4231/D3K931706 cite this

View All Supporting Documents

Category

Tools

Published on

Abstract

This is a simple tool that demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, densisty of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature.
    Homework: The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.
    First Time User Guide: This document provides important information about the tool, underlying physics and some assignment problems to help the user to get acquainted with the tool.
Bug Fixes:
  • Corrected the display of certain outputs.
Recent upgrades with subsequent versions:
  • 2.1: Added option to add Energy grid and color defined electron/hole plots.
  • 2.0.2: Fixed Si bandgap Si Eg(300K) = 1.1245 eV.
  • 2.0.1: Renamed for Fermi Level and Doping selection. Default setting for doping set to Nd=1e14/cm3 & Na=10/cm3.
  • 2.0: Improved energy grid with inhomogeneous meshing. Temperature dependent electron/hole mass and Bandgap implemented for Si/Ge/GaAs. Plot for Maxwell-Boltzmann statistics updated. Fixed for correct carrier calculation with Fermi-Dirac statistics.
  • 1.2.1: Updated tool tip for correct material parameters being used for simulations.
  • 1.2: Fixed for a bug in calculation of carrier densities. Computed values match analytical results for default input.
  • 1.1: Corrected ni value for Si at 300K. Plots made more resolved in energy axis.
  • 1.03: Updated the Front page of the tool with correct figures of the distributions.
WishList: Detailed information about the wishlist for the tool is here .

Sponsored by

NCN@Purdue

References

  • Semiconductor Device Fundamentals , Robert Pierret
  • Physics of Semiconductor Devices, S M Sze

Cite this work

Researchers should cite this work as follows:

  • Saumitra Raj Mehrotra; Abhijeet Paul; Gerhard Klimeck (2014), "Carrier Statistics Lab," https://nanohub.org/resources/fermi. (DOI: 10.4231/D3K931706).

    BibTex | EndNote

Tags

  1. nanoelectronics
  2. DOS
  3. Maxwell Boltzmann
  4. Carrier density
  5. nanoelectronics
  6. DOS
  7. Maxwell Boltzmann
  8. Carrier density
  9. NCN Supported
  10. NCN@Purdue Supported
  11. NCN Supported
  12. NCN@Purdue Supported
  13. nanoelectronics
  14. Carrier density
  15. DOS
  16. Maxwell Boltzmann
  17. NCN Supported
  18. NCN@Purdue Supported
  19. nanoelectronics
  20. Carrier density
  21. DOS
  22. Maxwell Boltzmann
  23. NCN Supported
  24. NCN@Purdue Supported