By Anisur Rahman1, (unknown)1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.3s - published on 27 Mar 2015

doi:10.4231/D38S4JQ3J cite this

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419 average velocity vs gate voltage for single and double gate mosfets
Asked by Anonymous Open 1
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123 Negative voltages for Fettoy
Asked by Harish Narendar Closed 2
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97 I would like to know the nantube length used in fettoy simulation. Is it 10nm? Does the L affect the drain current?
Asked by Michael Tan Loong Peng Closed 2
81 code posts error message for negative threshold voltages
Asked by Gerhard Klimeck Closed 2
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