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By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1
1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Version 1.3s - published on 27 Mar 2015
doi:10.4231/D38S4JQ3J cite this
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17 Apr 2008
5.0 out of 5 stars
I`m an undergraduate student…
I liked this tool ,this is very much useful to me..
thanks a lot…………..
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14 Jun 2007
12 Oct 2006
4.0 out of 5 stars
Seems to me that Source/Drain/Gate control parameters (\alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
27 Sep 2006
03 May 2006
Good way to look at different devices.
21 Feb 2006
As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.
07 Jan 2006