FETToy

By Anisur Rahman1; (unknown)1; Jing Guo2; Md. Sayed Hasan1; Yang Liu3; Akira Matsudaira4; Shaikh S. Ahmed5; Supriyo Datta1; Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.3s - published on 27 Mar 2015

doi:10.4231/D38S4JQ3J cite this

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Versions

Version Released DOI Handle Published
1.3s 27 Mar 2015 doi:10.4231/D38S4JQ3J yes
1.3 26 Feb 2014 doi:10.4231/D3RV0D12Z no
1.2.2 16 Oct 2009 doi:10.4231/D3736M20Z no
1.2.1 28 Oct 2008 doi:10.4231/D3B853H58 no
1.2 09 Jan 2008 doi:10.4231/D3J38KH0X no
1.1 07 Jan 2008 doi:10.4231/D3NV9994R no
1.0 03 Jun 2004 doi:10.4231/D3SN0138F no