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Model for Far From Equilibrium Transport in CNT/GNR FETs
Simulation of CNT/GNR FETs including inelastic scattering via virtual probes approach and accounting for the presence of possible Schottky barrier contacts.
Citations Non-affiliated (1) | Affiliated (0)
Paolo Michetti; Giuseppe Iannaccone (2010), "Analytical Model of One-Dimensional Carbon-Based Schottky-Barrier Transistors," Electronic Devices, IEEE Transactions, IEEE, 57, 7: pg. 1616-1625, 05. (DOI: 10.1109/TED.2010.2049219).