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GFET Tool
Simulate the electrical and thermal properties of a graphene field-effect transistor.
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Published on
Abstract
GFET Tool simulates the electrical and thermal characteristics of a graphene field-effect transistor (GFET). The code uses the drift-diffusion approach to calculate the current vs. voltage behavior of the GFET, self-consistently with the temperature of the device. It can also output the carrier density, temperature profile, drift velocity, and electric field along the GFET channel. The code accounts for velocity saturation at high fields, Seebeck effect at contacts, and possible device breakdown due to thermal self-heating. Many parameters (dimensions, mobility, contact resistance) can be set by the user
Credits
Eric Pop, Vincent Dorgan, Myung-Ho Bae, Feifei Lian
Sponsored by
National Science Foundation, Office of Naval Research, and nanoHUB.org
References
[1] V.E. Dorgan, M.-H. Bae, E. Pop, "Mobility and Saturation Velocity in Graphene on SiO2," Appl. Phys. Lett. 97, 082112 (2010)
[2] M.-H. Bae, Z.-Y. Ong, D. Estrada, E. Pop, "Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices," Nano Letters 10, 4787, (2010)
[3] K. Grosse, M.-H. Bae, F. Lian, E. Pop, W.P. King, "Nanoscale Joule heating, Peltier cooling and current crowding at graphene-metal contacts," Nature Nanotechnology 6, 287 (2011)
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