Memristor Simulation Tool

By Yuan Shen; Sansiri Tanachutiwat1; wei wang2

1. College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA 2. CNSE, University at Albany

Simulate resistance change of a Voltage-controlled Memristor

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Version 3.0w - published on 16 Mar 2015

doi:10.4231/D3KK94D2P cite this

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Credits

Yuan Shen, Sansiri Tanachutiwat, and Wei Wang

Sponsored by

Prof. Wei Wang, College of Nanoscale Science and Engineering, University at Albany, Albany, NY Kurt Schleunes, Berkshire School,

References

[1] Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart1 and R. Stanley Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83 May 2008.
[2] Leon O. Chua, "Memristor-The Missing Circuit Element," IEEE Transactions on Circuit Theory, September, vol. 18, no. 5, pp. 507-519, Sep 1971.

Publications

[1] Qi Liu, Shibing Long, Wei Wang, et. al., "Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions," IEEE EDL, vol. 30, no. 12, pp. 1335-1337, Dec. 2009.
[2] Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, et. al. "Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device," Applied Physics Letters, , 95, 023501, July 2009.
[3] Ming Liu, Zine Abid, Wei Wang, Xiaoli He, Qi Liu, and Weihua Guan, "Multi-Level Resistive Switching with Ionic and Metallic Filaments," Applied Physics Letters, 94, 233106, 2009.
[4] Q. Liu, X. He, Wei Wang and M. Liu, "Comparison of Filament and Memristor Theories for RRAM Junction Modeling," ChinaNano Conference, Beijing, China 2009.
[5] Weihua Guan, Ming Liu, Shibing Long, Qi Liu, and Wei Wang, “On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt,” Applied Physics Letters, 93, 223506, Dec. 2008.
[6] Ming Liu and Wei Wang, ”Application of nanojunction-based RRAM to reconfigurable IC,” IET Micro and Nano Letters, vol. 3, pp. 101-105, September 2008.
[7] Weihua Guan, S. Long, Q. Liu, M. Liu and Wei Wang, "Nonpolar nonvolatile resistive switching in Cu doped ZrO2," IEEE Electronic Device Letters, vol. 29, no. 5, pp. 434-438, April 2008.
[8] Weihua Guan, Ming Liu, Shibing Long, Qi Liu, and Wei Wang, "Excellent Resistive Switching Characteristics of Cu doped ZrO2 and its 64 bit Cross-point Integration", 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), October 20-23, 2008, Beijing, China (invited talk).
[9] Ming Liu and Wei Wang, “rFPGA: exploring rram application in FPGA”, IEEE/ACM NanoArch 2008, (IEEE/ACM DAC workshop), June 2008.
[10] Weihua Guan, Shibing Long, Qi Liu, Ming Liu, and Wei Wang, "Nonvolatile resistive switching characteristics of binary oxide with Cu doping", 2008 MRS Spring Meeting, March 24-28, 2008, San Francisco, USA.

Cite this work

Researchers should cite this work as follows:

  • Yuan Shen, Sansiri Tanachutiwat, wei wang (2015), "Memristor Simulation Tool," https://nanohub.org/resources/memristor. (DOI: 10.4231/D3KK94D2P).

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