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Memristor Simulation Tool

By Yuan Shen, Sansiri Tanachutiwat1, wei wang2

1. College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA 2. CNSE, University at Albany

Simulate resistance change of a Voltage-controlled Memristor

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Version 3.0w - published on 16 Mar 2015

doi:10.4231/D3KK94D2P cite this

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Credits

Yuan Shen, Sansiri Tanachutiwat, and Wei Wang

Sponsored by

Prof. Wei Wang, College of Nanoscale Science and Engineering, University at Albany, Albany, NY Kurt Schleunes, Berkshire School,

References

[1] Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart1 and R. Stanley Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83 May 2008.
[2] Leon O. Chua, "Memristor-The Missing Circuit Element," IEEE Transactions on Circuit Theory, September, vol. 18, no. 5, pp. 507-519, Sep 1971.

Publications

[1] Qi Liu, Shibing Long, Wei Wang, et. al., "Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions," IEEE EDL, vol. 30, no. 12, pp. 1335-1337, Dec. 2009.
[2] Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, et. al. "Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device," Applied Physics Letters, , 95, 023501, July 2009.
[3] Ming Liu, Zine Abid, Wei Wang, Xiaoli He, Qi Liu, and Weihua Guan, "Multi-Level Resistive Switching with Ionic and Metallic Filaments," Applied Physics Letters, 94, 233106, 2009.
[4] Q. Liu, X. He, Wei Wang and M. Liu, "Comparison of Filament and Memristor Theories for RRAM Junction Modeling," ChinaNano Conference, Beijing, China 2009.
[5] Weihua Guan, Ming Liu, Shibing Long, Qi Liu, and Wei Wang, “On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt,” Applied Physics Letters, 93, 223506, Dec. 2008.
[6] Ming Liu and Wei Wang, ”Application of nanojunction-based RRAM to reconfigurable IC,” IET Micro and Nano Letters, vol. 3, pp. 101-105, September 2008.
[7] Weihua Guan, S. Long, Q. Liu, M. Liu and Wei Wang, "Nonpolar nonvolatile resistive switching in Cu doped ZrO2," IEEE Electronic Device Letters, vol. 29, no. 5, pp. 434-438, April 2008.
[8] Weihua Guan, Ming Liu, Shibing Long, Qi Liu, and Wei Wang, "Excellent Resistive Switching Characteristics of Cu doped ZrO2 and its 64 bit Cross-point Integration", 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), October 20-23, 2008, Beijing, China (invited talk).
[9] Ming Liu and Wei Wang, “rFPGA: exploring rram application in FPGA”, IEEE/ACM NanoArch 2008, (IEEE/ACM DAC workshop), June 2008.
[10] Weihua Guan, Shibing Long, Qi Liu, Ming Liu, and Wei Wang, "Nonvolatile resistive switching characteristics of binary oxide with Cu doping", 2008 MRS Spring Meeting, March 24-28, 2008, San Francisco, USA.

Cite this work

Researchers should cite this work as follows:

  • Yuan Shen; Sansiri Tanachutiwat; wei wang (2015), "Memristor Simulation Tool," https://nanohub.org/resources/memristor. (DOI: 10.4231/D3KK94D2P).

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