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By Akira Matsudaira1, Saumitra Raj Mehrotra2, Shaikh S. Ahmed3, Gerhard Klimeck2, Dragica Vasileska4

1. University of Illinois at Urbana-Champaign 2. Purdue University 3. Southern Illinois University Carbondale 4. Arizona State University

Capacitance of a MOS device

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Version 1.8 - published on 23 Jul 2014

doi:10.4231/D3736M30D cite this

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First-Time User Guide View All Supporting Documents


Version Released DOI Handle Published
1.8 23 Jul 2014 doi:10.4231/D3736M30D yes
1.7 22 Apr 2010 doi:10.4231/D3TM72116 no 27 Oct 2009 doi:10.4231/D36M3335B no
1.6.2 01 Sep 2009 doi:10.4231/D30P0WQ63 no
1.6.1 19 Aug 2009 doi:10.4231/D3PG1HN46 no
1.6 08 Aug 2009 doi:10.4231/D3FX73X7V no
1.5 05 Aug 2009 doi:10.4231/D37D2Q69X no
1.4.3 17 Jul 2009 doi:10.4231/D3SB3WZ1N no
1.4.2 13 Jul 2009 doi:10.4231/D3JS9H737 no
1.4.1 10 Jul 2009 doi:10.4231/D36M3334V no
1.4 09 Jul 2009 doi:10.4231/D3QJ77X8P no
1.3 03 Oct 2008 doi:10.4231/D39C6S07W no
1.2 28 Jul 2008 doi:10.4231/D3WM13S9P no
1.1 23 Jul 2008 doi:10.4231/D38W3822W no
1.0 02 Nov 2005 doi:10.4231/D32Z12P2J no

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