Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2
1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
You must login before you can run this tool.
Version 1.8.8 - published on 06 Oct 2016
doi:10.4231/D37659G84 cite this
This tool is closed source.
First-Time User Guide
View All Supporting Documents
Write a review
19 Apr 2008
5.0 out of 5 stars
Please login to vote.
09 Apr 2008
2.0 out of 5 stars
this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn’t take into account the QM effects.
12 Oct 2006
A comprehensive device simulator
30 Nov 2005