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By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2
1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
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Version 1.9 - published on 21 Feb 2017
doi:10.4231/D31C1TH08 cite this
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