MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.9 - published on 21 Feb 2017

doi:10.4231/D31C1TH08 cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

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824 Will it be possible to separate the variable “Source/Drain Doping Concentration” into two different variables?
Proposed by Adelmo Ortiz Conde @ 2
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34 use interactive 2d potential viewer
Proposed by Gerhard Klimeck @ 0
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