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Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
This simulation is designed to give users an interactive visual representation of how a MOSFET would work under different scenarios by asking for input from the user and plotting the resulting graph of drain current against drain voltage. By running simulations to answer a series of guided questions, users will gain a more intuitive feeling for the operation of a MOSFET.
Acknowledgements The following Ph.D. students at Purdue University have provided valuable technical input for this project. Samiran Ganguly Computer Engineering Department, Specializing in Quantum Transportation Yuanchen Chu, Xin Jin, and Xingshu Sun Electrical Engineering Department, Specializing in Nanotechnology
1. Microelectronic circuit design / Richard C. Jaeger, Travis N. Blalock. — 4th ed. ISBN 978-0-07-338045-2 Integrated circuits—Design and construction. 2. Semiconductors—Design and construction. 3. Electronic circuit design. Blalock, Travis N. TK7874.J333 2010 2. Levinstein, M E., S Rumyantsev, and M Shur, eds. Handbook Series on Semiconductor Parameters. London: World Scientific, 1999. Semiconductors on NSM. Web. 19 Jan. 2014. http://www.ioffe.ru/SVA/NSM/Semicond/ 3. Pierret, Robert F. Semiconductor Device Fundamentals. N.p.: Pearson College Div, 1996. 572-618. Print.
Cite this work
Researchers should cite this work as follows:
- Chen Shang; Sankarsh Ramadas; Tanya Faltens; Derrick Kearney; Krishna Madhavan; (2014) "MOSFETsim", mosfetsat - id #927.