NanoFET

By M. P. Anantram1, Shaikh S. Ahmed2, alexei svizhenko3, Derrick Kearney4, Gerhard Klimeck4

1. NASA 2. Southern Illinois University Carbondale 3. Stanford University 4. Purdue University

Simulates ballistic transport in 2D MOSFET devices

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Version 1.6.2 - published on 25 Mar 2016

doi:10.4231/D33775W58 cite this

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1400 supports any material other then Si?
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213 why there is difference in results between this tool and Nonamos at Tsi=3nm
Asked by Mohammed M. El-Banna Open 1