NanoFET

By M. P. Anantram1; Shaikh S. Ahmed2; alexei svizhenko3; Derrick Kearney4; Gerhard Klimeck4

1. NASA 2. Southern Illinois University Carbondale 3. Stanford University 4. Purdue University

Simulates ballistic transport in 2D MOSFET devices

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Version 1.6.3 - published on 15 Oct 2019

doi:10.21981/KNFS-1475 cite this

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2400 Tool is insensitive to band gap change
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2039 Server disconnected (code: 1006) when simulating
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1400 supports any material other then Si?
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213 why there is difference in results between this tool and Nonamos at Tsi=3nm
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