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OMEN_FET
Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation
Version 1.2.2 - published on 25 Mar 2016
doi:10.4231/D3BR8MH4Z cite this
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N. Kharche | ... GUI development and benchmarking with experimental data |
M. Luisier | ...Core C++ simulator development |
G. Howlett | ...Flow visualizer development |
G. Klimeck | ...GUI requirements and usage scenario requirements |
M. Salmani-Jelodar | ...GUI and back scripts modifications for V 1.1.0 |
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References
The transport simulator is described in: Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-κ Gate Stacks, M. Luisier and A. Schenk, IEEE Trans. on Elec. Dev., Vol. 55, p.1494, (2008).
Benchmarks with experiments are described in: Performance Analysis of Ultra- Scaled InAs HEMTs", N. Kharche, G. Klimeck, D. H. Kim, J. A. del Alamo, M. Luisier, IEDM Tech. Digest, (2009).
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The transport simulator is described in: Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-κ Gate Stacks, M. Luisier and A. Schenk, IEEE Trans. on Elec. Dev., Vol. 55, p.1494, (2008).
Benchmarks with experiments are described in: Performance Analysis of Ultra- Scaled InAs HEMTs", N. Kharche, G. Klimeck, D. H. Kim, J. A. del Alamo, M. Luisier, Accepted for publication in IEDM 2009