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Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Version 1.2.1 - published on 29 Sep 2015

doi:10.4231/D3H41JN72 cite this

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1077 Interpretation of the results
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1061 Can you please provide theUser guide for this tool?
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654 Can you please tell me how to give the doping concentration?The doping concentration i give and which comes in simulation are not same
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526 How usable is OMEN_FET for bilayer graphene or graphene on hex boron nitride simulations?
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0 Like, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.