You must login before you can run this tool.
This tool was created like a part of the work at master degree in Computer Engineering at Micro and Nano Technology research line at Universidade Federal do Rio Grande do Sul, Brazil.
It must help graduation professors and students to teach and learn about the RTN (Random Telegraph Noise) behavior.
With the TrapSimulator, it will be possible to input electrical, physical and statistical parameters, and then, to compare each inputs group and its results.
Ricardo Carvalho de Melos
GIUSTINA, R.V.D – Estudo e Simulação de Ruído em Circuitos e Dispositivos MOS. Dissertação de Mestrado UFRGS, Porto Alegre RS, 2012.
KIRTON, M. J. and UREN, M. J. Advances in Physics. Volume 38, nº 4, pag 367 – 468.
KLIMECK, GERHARD. NanoHUB.org Tutorial: Education Simulation Tools. IEEE-NEMS 2007.
KLIMECK, GERHARD; MCLENNAN, MICHAEL; MANNINO, MATTEO; KORKUSINSKIL MAREK; HEITZINGERT, CLEMENS; KENNELL, RICK and CLARK, STEVEN. NEMO 3-D and nanolUB: Bridging Research and Education. IEEE-NANO 2006. Sixth IEEE Conference on Nanotechnology, 2006.
PAVELKA, J. Amplitude of RTS Noise in MOSFETs. IEEE International Conference on MicroElectronics (ICM), 2009 Marrakech. IEEE, 2009 pag 346-349.
PSOTKA, J. Educational games and virtual reality as disruptive technologies. Educational Technology & Society, April, 2013, Vol.16(2), p.69(12), 1436-4522. Disponível em: . Acesso em: 04 julho de 2017.
RAZAVI, B. Design of Analog CMOS Integrated Circuits. New York. McGraw Hill, 2011.
SCHEFFER, L.; LAVAGNO, L; MARTIN, G. EDA for IC Implementation, Circuit Design, and Process Technology (Electronic design automation for Integrated circuits handbook). Boca Ration: Taylor & Francis, 2006.
SEDRA, A. S. and SMITH, K. C. – Microeletrônica. Pearson, 4ª ed, São Paulo 2004.
THOMAS, E. B. and JOHN, S. K. Power Spectral Density Computation using Modified Welch Method. IJSTE - International Journal of Science Technology & Engineering .Volume 2, issue 4, October 2015
TSIVIDIS, Y. Operation and Modeling of the Mos Transistor. New York. Oxford University Press, 2004. VON HAARTMAN, M. V. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors. Tesis (Doctorate) - Royal Institute of Technology. Estocolmo, 2006.
VON HAARTMAN, M.; ÖSTLING, M. Low-Frequency Noise in Advanced MOS Devices. Dordrecht: Springer, 2007.
WIRTH, GILSON; REIS, RICARDO and CAO, YU. Circuit Design for Reliability. Springer, New York, 2015.
WIRTH, G. I.; DA SILVA, R.; BREDERLOW, R. Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs. IEEE Transactions on Electron Devices, v.54, n. 2, 2007.
WIRTH, G. I.; DA SILVA, R.; KACZER, B.; Statistical Model for MOSFET Bias Temperature Instability Component Due to Charge Trapping. IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2743-2751, Aug. 2011.
WIRTH, G. I. et al. Modeling the sensitivity of CMOS circuits to radiation induced single event transients. Microelectronics Reliability, v. 48, issue 1, p. 29-36, jan. 2008.
WIRTH, G. I.; VIEIRA, M. Automated Analysis of Propagation Induced Pulse Broadening of Single Event Transients. In: SBMICRO, 2016. SBMicro, Belo Horizonte, 2016.
ZANOLLA, N. Reduction of RTN Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias. IEE Transactions on Electron Devices, New York, v 57, nº 5, pag. 1119 – 1128, May 2010.
Cite this work
Researchers should cite this work as follows:
Ricardo Carvalho de Melos
- Poisson Process