Support

Support Options

Submit a Support Ticket

 

NanoTCAD ViDES

By Gianluca Fiori1, Giuseppe Iannaccone2

1. University of Pisa 2. Universita' di Pisa

3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors.

Launch Tool

You must login before you can run this tool.

Version 1.21 - published on 08 Jul 2009

doi:10.4231/D3RJ48T8X cite this

This tool is closed source.

View All Supporting Documents

See also

No results found.

SCREENSHOT #1 CNT GNR2

Category

Tools

Published on

Abstract

NanoTCAD ViDES is a device simulator able to compute transport in nanoscale devices, solving self-consistently the 3D Poisson and quantum transport equation within the NEGF formalism.

This version of NanoTCAD ViDES deals with Graphene Nanoribbon (GNR), Carbon Nanotube (CNT) and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.

For what concerns GNR and CNT, devices with Schottky barriers and doped reservoirs can be both simulated.


You can DOWNLOAD the source code under the BSD 4-clause license and find more information at NanoTCAD ViDES website

Credits

Xufeng Wang (rappture interface)

References

Y. Yoon, G. Fiori, S. Hong, J. Guo and G. Iannaccone, "Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs", IEEE Transaction on Electron Devices, Vol. 55, pp. 2314-2323, 2008.

G. Fiori, G. Iannaccone, "Simulation of Graphene Nanoribbon Field-Effect Transistors", IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007.

G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.

G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.

G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.

Cite this work

Researchers should cite this work as follows:

  • Gianluca Fiori; Giuseppe Iannaccone (2009), "NanoTCAD ViDES," https://nanohub.org/resources/vides. (DOI: 10.4231/D3RJ48T8X).

    BibTex | EndNote

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.