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Uniform versus delta doping in 1D heterostructures: an Exercise
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15 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to demonstrate that delta doping leads to larger sheet electron density in the channel and it also allows for better control of the charge density in the channel region of High Electron Mobility Transistors (HEMTs).
Parallel Conduction Channel: an Exercise for 1D Heterostructure Lab
This exercise uses the 1-D Heterostructure Lab, which demonstrates that adding more dopants in the buffer layer becomes ineffective after certain critical doping density. Beyond this critical doping density, additional dopants practically fill in the parallel conduction channel that sits in the...