On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
09 Mar 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....