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Exercise: MATLAB Tool Construction for Degenerate/Nondegenerate Semiconductors That Includes Partial Ionization of the Dopants
29 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students how to calculate Ec-Ef from charge neutrality for general Fermi-Dirac statistics and compensated semiconductors. As such it then allows the student to calculate temperature dependence of the electron and hole densities as well as the position of the Fermi...
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Exercise: Basic Operation of n-Channel SOI Device
23 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students the basic operation of n-channel SOI devices.NSF
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MOSFET Operation Description
18 Jul 2008 | | Contributor(s):: Dragica Vasileska
This set of slides gives the students basic understanding of MOSFET operation description.www.eas.asu.edu/~vasileskNSF Career
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MOS Capacitors: Theory and Modeling
18 Jul 2008 | | Contributor(s):: Dragica Vasileska
These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.
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Computational Electronics HW - Simplified Band Structure Model
11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF
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Energy Bands as a Function of the Geometry of the n-Well Potential: an Exercise
05 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
Explores the position and the width of the bands as a function of the 10-barrier potential parameters. NSF
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Can we define unique effective masses in Si nanowires?
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the numerically calculated dispersion relation. This is clearly illustrated on the example of Si nanowires...
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Exercise: Density of States Function Calculation
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF
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Exercise: Dopants and Semiconductor Statistics
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise emphasizes the calculation of the position of the Fermi level at T=0K and it also teaches the students about Einstain relation for non-degenerate semiconductors.www.eas.asu.edu/~vasileskNSF
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PN Diode Exercise: Series Resistance
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
An exercise in determining the series resistance in a PN diode.
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Exercise: PIN Diode
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
An exercise in the operation of a PIN diode under the conditions of forward and reverse bias.
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PN Diode Exercise: Graded Junction
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
An exercise in determining the preferred approach to solving the Poisson equation.
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Schred: Exercise 1
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...
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SCHRED: Exercise 2
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.
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Schred: Exercise 3
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates. www.eas.asu.edu/~vasilesk NSF
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MOSFET Exercise
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF
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Quantum-Mechanical Reflections in Nanodevices: an Exercise
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise points out to the fact that quantum-mechanical reflections are going to be significant in nanoscale devices and proper modeling of these device structures must take into consideration the quantum-mechanical reflections. NSF, ONR Dragica Vasileska personal web-site...
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Periodic Potentials and Bandstructure: an Exercise
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students that in the case of strong coupling between the neighboring wells in square and Coulomb periodic potential wells electrons start to behave as free electrons and the gaps that open at the Brillouin zone boundaries become smaller and smaller (thus recovering the...
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From 1 well to 2 wells to 5 wells to periodic potentials: an Exercise
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates that the interaction between the wells lifts the degeneracy of the quasi-bound states and if in the limit we have infinite periodic potential it leads to formation of energy bands. Notice that when the interaction is less strong the energy levels are more sharp and...
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Exercise: CV curves for MOS capacitors
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF