Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.
Computational Electronics HW - Bandstructure Calculation
out of 5 stars
11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
Computational Electronics HW - DOS and Fermi Golden Rule
Computational Electronics HW - Drift-Diffusion Equations
Computational Electronics HW - Finite Difference Discretization of Poisson Equation
Computational Electronics HW - Scharfetter-Gummel Discretization
Computational Electronics HW - Mobility Models
Computational Electronics HW - Linearization of Poisson Equation
Computational Electronics HW - Scattering Mechanisms
Computational Electronics HW - Quamc 2D Lab Exercises
Tutorial on Semi-empirical Band Structure Methods
06 Jul 2008 | | Contributor(s):: Dragica Vasileska
This tutorial explains in details the Empirical Pseudopotential Method for the electronic structure calculation, the tight-binding method and the k.p method. For more details on the Empirical Pseudopotential Method listen to the following presentation:Empirical Pseudopotential Method Described...
Exercise: Density of States Function Calculation
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF
Schred: Exercise 1
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...
SCHRED: Exercise 2
In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.www.eas.asu.edu/~vasileskNSF
Schred: Exercise 3
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates.www.eas.asu.edu/~vasileskNSF
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF
Bulk Monte Carlo Code Described
01 Jul 2008 | | Contributor(s):: Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...
Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...
Exercise: CV curves for MOS capacitors
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
Schred Tutorial Version 2.1
23 Jun 2008 | | Contributor(s):: Dragica Vasileska
This Schred tutorial [or User's Manual] is intended to help users of the Schred tool with the Rappture interface. Readers will find various examples for modeling single-gate and dual-gate capacitors with either metal or polysilicon gates. The models also use either semi-classical or...
Quantum Size Effects and the Need for Schred
In this paper, we provide a historical overview of the observation of quantum effects in both experimental and theoretical nanoscale devices. This overview puts into perspective the need for developing and using the Schred tool when modeling nanoscale devices. At the end of the document, we...