Tags: ACUTE

Description

ACUTE

ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.

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Resources (21-40 of 90)

  1. Computational Electronics HW - Linearization of Poisson Equation

    11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

  2. Computational Electronics HW - Mobility Models

    11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

  3. Computational Electronics HW - Quamc 2D Lab Exercises

    11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

  4. Computational Electronics HW - Scattering Mechanisms

    11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

  5. Computational Electronics HW - Scharfetter-Gummel Discretization

    11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

  6. Computational Electronics HW Set

    24 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  7. Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...

  8. Cosine Bands: an Exercise for PCPBT

    21 Aug 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska

    This exercise demonstrates the formation of cosine bands as we increase the number of wells in the n-well structure.

  9. Coulomb Blockade Simulation

    05 Jul 2006 | | Contributor(s):: Xufeng Wang, Bhaskaran Muralidharan, Gerhard Klimeck

    Simulate Coulomb Blockade through Many-Body Calculations in a single and double quantum dot system

  10. Double-Barrier Case: An Exercise

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  11. Drift-Diffusion Model, Mobility Modeling

    02 Jun 2006 | | Contributor(s):: Dragica Vasileska

    Drift-Diffusion Model

  12. Drift-Diffusion Model, Part A: Introduction

    02 Jun 2006 | | Contributor(s):: Dragica Vasileska

    Drift-Diffusion Model

  13. Drift-Diffusion Model, Part B: Solution Details

    02 Jun 2006 | | Contributor(s):: Dragica Vasileska

    Drift-Diffusion Model

  14. Drift-Diffusion Model, Part C: Sharfetter-Gummel, Time-Dependent Simulations

    02 Jun 2006 | | Contributor(s):: Dragica Vasileska

    Drift-Diffusion Model

  15. Empirical Pseudopotential Method Description

    02 Jun 2006 | | Contributor(s):: Dragica Vasileska

    Solid-State Theory and Semiconductor Transport Fundamentals

  16. Energy Bands as a Function of the Geometry of the n-Well Potential: an Exercise

    05 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    Explores the position and the width of the bands as a function of the 10-barrier potential parameters. NSF

  17. Ensemble Monte Carlo Method Described

    27 Apr 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry

    In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR

  18. Examples for QuaMC 2D particle-based device Simulator Tool

    10 May 2008 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck

    We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.

  19. Exercise: Basic Operation of n-Channel SOI Device

    23 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise teaches the students the basic operation of n-channel SOI devices.NSF

  20. Exercise: CV curves for MOS capacitors

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF