Tags: ballistic

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  1. How to simulate schottky Barrier MOSFET in nano hub

    Closed | Responses: 0

    I am new for this account. Can any body explain How to do this one.

    https://nanohub.org/answers/question/352

  2. A Tutorial for Nanoelectronics Simulation Tools

    03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...

  3. ECE 656 Lecture 13: Solving the BTE: equilibrium and ballistic

    22 Sep 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

  4. ECE 656 Lecture 35: Ballistic Transport

    09 Dec 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Schottky barriersTransport across a thin baseHigh-field collectors

  5. ECE 656 Lecture 39: Ballistic Transport in Devices I

    09 Feb 2012 | | Contributor(s):: Mark Lundstrom

    Outline:Transport across a barrierTransport across a thin baseHigh-field collectorsQuestions?

  6. ECE 656 Lecture 40: Ballistic Transport in Devices II

    21 Feb 2012 | | Contributor(s):: Mark Lundstrom

    This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET

  7. ECE 656 Lecture 5: 1D Resistors

    14 Sep 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Review1D ballistic resistors1D diffusive resistorsDiscussionSummary

  8. ECE 656 Lecture 6: Discussion

    18 Sep 2009 | | Contributor(s):: Mark Lundstrom

    OutlineQuantum confinement and effective massBulk 1D transport and mfpPeriodic vs. Box boundary conditionsThermal velocities"Ballistic mobility"

  9. ECE 656 Lecture 7: 2 and 3D Resistors

    27 Sep 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Another view of the same problem2D resistorsDiscussion3D resistorsSummary

  10. ECE 656 Lecture 7: Resistance - Ballistic to Diffusive

    16 Sep 2011 | | Contributor(s):: Mark Lundstrom

    Outline:Review2D ballistic resistors2D diffusive resistorsDiscussionSummary

  11. FETToy

    14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  12. FETToy 2.0 Source Code Download

    09 Mar 2005 |

    FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a...

  13. Introduction to FETToy

    03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

  14. Introduction to nanoMOS

    02 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

  15. Lecture 3: Resistance-Ballistic to Diffusive

    28 Jul 2011 | | Contributor(s):: Mark Lundstrom

    The resistance of a ballistic conductor and concepts, such as the quantumcontact resistance, are introduced and discussed. The results are then generalized to treat transport all the way from the ballistic to diffusive regimes.

  16. MOSCNT: code for carbon nanotube transistor simulation

    14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov

    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted...

  17. Resonant Tunneling Diode Simulator

    10 Oct 2005 | | Contributor(s):: Michael McLennan

    Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport

  18. Schottky-Barrier CNFET

    16 Mar 2007 | | Contributor(s):: Arash Hazeghi, Tejas K, H.-S. Philip Wong

    Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

  19. Thermoelectric Power Factor Calculator for Nanocrystalline Composites

    18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker

    Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions

  20. Thermoelectric Power Factor Calculator for Superlattices

    18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker

    Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using Non-Equilibrium Green's Functions