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Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | | Contributor(s):: Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale MOSFET...
ECE 612 Lecture 26: Heterostructure FETs
out of 5 stars
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008 | | Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008 | | Contributor(s):: Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an impenetrable membrane a single atom thick. Rolled up into a nanometer-diameter cylinder--a carbon...
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | | Contributor(s):: Supriyo Datta
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
MCW07 Modeling Molecule-Assisted Transport in Nanotransistors
06 Nov 2007 | | Contributor(s):: Kamil Walczak
Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel. One could imagine alternate device structures where molecules act as quantum dots rather than...
The Nano-MOSFET: A brief introduction
17 Aug 2007 | | Contributor(s):: Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller, but MOSFETs are still modeled and understood much as they were 30 years ago. Seminal work in the 1960’s laid the foundation for our understanding of the MOSFET, but traditional approaches are based on concepts that lose...
ECE 612 Lecture 10: The Ballistic MOSFET
18 Sep 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 11: The Quasi-ballistic MOSFET
Logic Devices and Circuits on Carbon Nanotubes
05 Apr 2006 | | Contributor(s):: Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect...
Optimization of Transistor Design for Carbon Nanotubes
20 Jan 2006 | | Contributor(s):: Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.Using the simulator, we show that a recently reported high-performanceCNTFET delivers a near ballistic on-current. The off-state, however, issignificantly degraded because the CNTFET operates like anon-conventional Schottky...
A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
17 Jan 2006 | | Contributor(s):: Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...
Simple Theory of the Ballistic MOSFET
11 Oct 2005 | | Contributor(s):: Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...