Tags: ballistic MOSFET

Online Presentations (1-20 of 22)

  1. A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

    17 Jan 2006 | | Contributor(s):: Mincheol Shin

    As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...

  2. Can numerical “experiments” INSPIRE physical experiments?

    20 Dec 2007 | | Contributor(s):: Supriyo Datta

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

  3. ECE 612 Lecture 10: The Ballistic MOSFET

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  4. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  5. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

  6. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

  7. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

  8. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.

  9. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | | Contributor(s):: Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale MOSFET...

  10. Lecture 3A: The Ballistic MOSFET

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...

  11. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

  12. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

  13. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

  14. Logic Devices and Circuits on Carbon Nanotubes

    05 Apr 2006 | | Contributor(s):: Joerg Appenzeller

    Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect...

  15. MCW07 Modeling Molecule-Assisted Transport in Nanotransistors

    06 Nov 2007 | | Contributor(s):: Kamil Walczak

    Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel. One could imagine alternate device structures where molecules act as quantum dots rather than...

  16. Nano Carbon: From ballistic transistors to atomic drumheads

    14 May 2008 | | Contributor(s):: Paul L. McEuen

    Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an impenetrable membrane a single atom thick. Rolled up into a nanometer-diameter cylinder--a carbon...

  17. On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability

    28 Sep 2005 | | Contributor(s):: Muhammad A. Alam

    In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with the invention of bipolar transistors several years later. In 1960s, scientists at Fairchild worked...

  18. Optimization of Transistor Design for Carbon Nanotubes

    20 Jan 2006 | | Contributor(s):: Jing Guo

    We have developed a self-consistent atomistic simulator for CNTFETs.Using the simulator, we show that a recently reported high-performanceCNTFET delivers a near ballistic on-current. The off-state, however, issignificantly degraded because the CNTFET operates like anon-conventional Schottky...

  19. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...

  20. Self-Heating and Scaling of Silicon Nano-Transistors

    05 Aug 2004 | | Contributor(s):: Eric Pop

    The most often cited technological roadblock of nanoscale electronics is the "power problem," i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. Technology roadmap (ITRS) requirements are expected to lead to more heat dissipation problems,...