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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
0.0 out of 5 stars
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
21 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we...
Logic Devices and Circuits on Carbon Nanotubes
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23 May 2006 | Online Presentations | Contributor(s): Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...
Exploring New Channel Materials for Nanoscale CMOS
4.5 out of 5 stars
21 May 2006 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
Optimization of Transistor Design for Carbon Nanotubes
21 Jan 2006 | Online Presentations | Contributor(s): Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.
Using the simulator, we show that a recently reported high-performance
CNTFET delivers a near ballistic on-current. The...
A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor
(MOSFET) shrinks into the deep sub micron regime, the device performance significantly...
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Series | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights...
Notes on the Ballistic MOSFET
21 Nov 2005 | Papers | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter
frequently from ionized impurities, phonons, surface roughness, etc. so that the average...
Simple Theory of the Ballistic MOSFET
19 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I...
On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
03 Oct 2005 | Online Presentations | Contributor(s): Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with...
Self-Heating and Scaling of Silicon Nano-Transistors
07 Mar 2005 | Online Presentations | Contributor(s): Eric Pop
The most often cited technological roadblock of nanoscale electronics is the "power problem," i.e. power densities and device temperatures reaching levels that will prevent their reliable...
Theory of Ballistic Nanotransistors
27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the...