A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin

As the device size of the conventional planar metal oxide semiconductor field effect transistor (MOSFET) shrinks into the deep sub micron regime, the device performance significantly degrades mainly …

https://nanohub.org/resources/983

ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

One-stop-shop for teaching semiconductor device education

https://nanohub.org/resources/abacus

Ballistic Nanotransistors - Learning Module

07 Dec 2005 | Learning Modules | Contributor(s): Mark Lundstrom

This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights …

https://nanohub.org/resources/612

Can numerical “experiments” INSPIRE physical experiments?

20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta

This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational …

https://nanohub.org/resources/3716

Device Physics and Simulation of Silicon Nanowire Transistors

20 May 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

https://nanohub.org/resources/1313

ECE 612 Lecture 10: The Ballistic MOSFET

18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

https://nanohub.org/resources/1794

ECE 612 Lecture 11: The Quasi-ballistic MOSFET

18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

https://nanohub.org/resources/1797

ECE 612 Lecture 26: Heterostructure FETs

10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

https://nanohub.org/resources/6032

ECE 612 Lecture 7: Scattering Theory of the MOSFET I

08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

https://nanohub.org/resources/5367

ECE 612 Lecture 8: Scattering Theory of the MOSFET II

08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

https://nanohub.org/resources/5368

Exploring New Channel Materials for Nanoscale CMOS

21 May 2006 | Publications | Contributor(s): Anisur Rahman

The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the …

https://nanohub.org/resources/1315

Introduction to FETToy

03 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon …

https://nanohub.org/resources/2844

Introduction to nanoMOS

02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon …

https://nanohub.org/resources/2845

Lecture 1: Review of MOSFET Fundamentals

26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the …

https://nanohub.org/resources/5307

Lecture 1b: Nanotransistors - A Bottom Up View

20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for …

https://nanohub.org/resources/9344

Lecture 3A: The Ballistic MOSFET

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics …

https://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

https://nanohub.org/resources/5310

Lecture 4: Scattering in Nanoscale MOSFETs

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in …

https://nanohub.org/resources/5311

Lecture 5: Application to State-of-the-Art FETs

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the …

https://nanohub.org/resources/5312

Logic Devices and Circuits on Carbon Nanotubes

05 Apr 2006 | Online Presentations | Contributor(s): Joerg Appenzeller

Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport …

https://nanohub.org/resources/1487