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A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
5.0 out of 5 stars
17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor
(MOSFET) shrinks into the deep sub micron regime, the device performance significantly...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Learning Modules | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights...
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
Device Physics and Simulation of Silicon Nanowire Transistors
0.0 out of 5 stars
20 May 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
ECE 612 Lecture 10: The Ballistic MOSFET
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 11: The Quasi-ballistic MOSFET
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2) Heterojunction review,
3) Modulation doping,
4) I-V characteristics,
5) Device Structure / Materials,
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
Exploring New Channel Materials for Nanoscale CMOS
4.5 out of 5 stars
21 May 2006 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Introduction to FETToy
03 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon...
Introduction to nanoMOS
02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon...
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...
Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and...
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
Logic Devices and Circuits on Carbon Nanotubes
23 May 2006 | Online Presentations | Contributor(s): Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...