Resources (21-40 of 48)

1. OMEN Nanowire Homework Problems

   24 Jan 2011 | | Contributor(s):: SungGeun Kim

   OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.

2. ECE 656 Lecture 35: Ballistic Transport

   09 Dec 2009 | | Contributor(s):: Mark Lundstrom

   Outline:Schottky barriersTransport across a thin baseHigh-field collectors

3. ECE 656 Lecture 7: 2 and 3D Resistors

   27 Sep 2009 | | Contributor(s):: Mark Lundstrom

   Outline:Another view of the same problem2D resistorsDiscussion3D resistorsSummary

4. ECE 656 Lecture 13: Solving the BTE: equilibrium and ballistic

   22 Sep 2009 | | Contributor(s):: Mark Lundstrom

   Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

5. ECE 656 Lecture 6: Discussion

   18 Sep 2009 | | Contributor(s):: Mark Lundstrom

   OutlineQuantum confinement and effective massBulk 1D transport and mfpPeriodic vs. Box boundary conditionsThermal velocities"Ballistic mobility"

6. ECE 656 Lecture 5: 1D Resistors

   14 Sep 2009 | | Contributor(s):: Mark Lundstrom

   Outline:Review1D ballistic resistors1D diffusive resistorsDiscussionSummary

7. Band Structure Lab Demonstration: Bulk Strain

   12 Jun 2009 | | Contributor(s):: Gerhard Klimeck

   This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

8. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

   out of 5 stars 

   21 Jan 2009 | | Contributor(s):: Supriyo Datta

9. Thermoelectric Power Factor Calculator for Superlattices

   out of 5 stars 

   18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker

   Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using Non-Equilibrium Green's Functions

10. ECE 612 Lecture 26: Heterostructure FETs

    out of 5 stars 

    10 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

11. ECE 495N Lecture 26: Ballistic Conductance

    out of 5 stars 

    01 Dec 2008 | | Contributor(s):: Supriyo Datta

12. Thermoelectric Power Factor Calculator for Nanocrystalline Composites

    out of 5 stars 

    18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker

    Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions

13. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    out of 5 stars 

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

14. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    out of 5 stars 

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

15. Lecture 3B: The Ballistic MOSFET

    out of 5 stars 

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

16. Lecture 3A: The Ballistic MOSFET

    out of 5 stars 

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...

17. Physics of Nanoscale MOSFETs

    out of 5 stars 

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

18. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    out of 5 stars 

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

19. Quantum Mechanics: Landauer's Formula

    out of 5 stars 

    08 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    When a metallic nanojunction between two macroscopic electrodes is connected to a battery, electrical current flows across it. The battery provides, and maintains, the charge imbalance between the electrode surfaces needed to sustain steady-state conduction in the junction. This static...

20. Slides: Buttiker formula derivation

    out of 5 stars 

    08 Jul 2008 | | Contributor(s):: Dragica Vasileska

    www.eas.asu.edu/~vasileskNSF