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1-D Phonon BTE Solver
28 Jul 2014 | | Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
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difference between ballistic transport and quasic -ballistc transport
Q&A|Closed | Responses: 0
difference between ballistic transport and quasic -ballistc transport ,,, what is subband structure ? how wiil it look like. for gate all around (GAA)?
https://nanohub.org/answers/question/651
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For a length within the ballistic regime, why the current value changing with the length ?
Q&A|Open | Responses: 1
Hi !
Ok, I considered the relaxation time to find the relaxation length
( L = tau * Vf = 36.8 um ; taking Vf = 8.10^5m/s )
And so I chose 2 values for the length...
https://nanohub.org/answers/question/492
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A Matlab 1D-Poisson-NEGF simulator for 2D FET
04 Mar 2024 | | Contributor(s):: Chien-Ting Tung
A Matlab 1D-Poisson-NEGF solver to calculate a 2D FET where the channel is only one atom thick. It assumes the channel thickness is only one point and solves the 1D Poisson and NEGF self-consistently.It also utilizes a Fermi-Dirac integral table from...
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
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Alexander Kloes
https://nanohub.org/members/8101
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Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
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Carrier Transport at the Nanoscale
27 Nov 2007 | | Contributor(s):: Mark Lundstrom
Fall 2007Note: A more current teaching of this course with online lectures is available as ECE 656: Electronic Transport in Semiconductors (Fall 2011).This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts, the...
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CQT: Concepts of Quantum Transport
30 Nov 2006 | | Contributor(s):: Supriyo Datta
Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations on Nanoelectronics and the Meaning of Resistance. How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that...
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Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
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Dissipative Quantum Transport in Semiconductor Nanostructures
23 Dec 2011 | | Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...
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ECE 495N Lecture 26: Ballistic Conductance
01 Dec 2008 | | Contributor(s):: Supriyo Datta
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ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
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ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
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ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
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ECE 612 Nanoscale Transistors (Fall 2006)
08 Aug 2006 | | Contributor(s):: Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NTNanoscale Transistors is a five-week online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important...
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ECE 656 Lecture 13: Solving the BTE: equilibrium and ballistic
22 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
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ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
11 Nov 2011 | | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
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ECE 656 Lecture 35: Ballistic Transport
09 Dec 2009 | | Contributor(s):: Mark Lundstrom
Outline:Schottky barriersTransport across a thin baseHigh-field collectors