
1D Phonon BTE Solver
28 Jul 2014   Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.

difference between ballistic transport and quasic ballistc transport
Closed  Responses: 0
difference between ballistic transport and quasic ballistc transport ,,, what is subband structure ? how wiil it look like. for gate all around (GAA)?
https://nanohub.org/answers/question/651

For a length within the ballistic regime, why the current value changing with the length ?
Open  Responses: 1
Hi !
Ok, I considered the relaxation time to find the relaxation length
( L = tau * Vf = 36.8 um ; taking Vf = 8.10^5m/s )
And so I chose 2 values for the...
https://nanohub.org/answers/question/492

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highk gate...

Carrier Transport at the Nanoscale
27 Nov 2007   Contributor(s):: Mark Lundstrom
Fall 2007Note: A more current teaching of this course with online lectures is available as ECE 656: Electronic Transport in Semiconductors (Fall 2011).This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts,...

CQT: Concepts of Quantum Transport
30 Nov 2006   Contributor(s):: Supriyo Datta
Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations onNanoelectronics and the Meaning of Resistance.How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that has intrigued...

Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Dissipative Quantum Transport in Semiconductor Nanostructures
23 Dec 2011   Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

ECE 495N Lecture 26: Ballistic Conductance
01 Dec 2008   Contributor(s):: Supriyo Datta

ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008   Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) IV characteristics,5) Device Structure / Materials,6) Summary.

ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

ECE 612 Nanoscale Transistors (Fall 2006)
08 Aug 2006   Contributor(s):: Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NTNanoscale Transistors is a fiveweek online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important...

ECE 656 Lecture 13: Solving the BTE: equilibrium and ballistic
22 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

ECE 656 Lecture 29: The BTE Revisited  Equilibrium and Ballistic
11 Nov 2011   Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

ECE 656 Lecture 35: Ballistic Transport
09 Dec 2009   Contributor(s):: Mark Lundstrom
Outline:Schottky barriersTransport across a thin baseHighfield collectors

ECE 656 Lecture 39: Ballistic Transport in Devices I
20 Dec 2011   Contributor(s):: Mark Lundstrom
Outline:Transport across a barrierTransport across a thin baseHighfield collectorsQuestions?

ECE 656 Lecture 40: Ballistic Transport in Devices II
20 Dec 2011   Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET