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Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 20: Heterojunction Bipolar Transistor
17 Nov 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 19: Bipolar Transistors Design
ECE 606 Lecture 18: Bipolar Transistors a) Introduction b) Design
05 Nov 2012 | | Contributor(s):: Gerhard Klimeck
BJT Lab Learning Materials
By completing the BJT Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) BJT (Bipolar Junction Transistor)...
BJT Lab Worked Out Problem 2
02 Feb 2011 | | Contributor(s):: Saumitra Raj Mehrotra
This sample worked out problem simulated a pnp type BJT in Common Base configuration and calculates AC and DC amplification ratios.
BJT Lab Worked Out Problem 1
01 Feb 2011 | | Contributor(s):: Saumitra Raj Mehrotra
This sample worked out problem analyzes the output characteristic curves of an npn BJT transistor and extracts the relevant parameters.
BJT Lab - Amplifier
31 Jan 2011 | | Contributor(s):: Saumitra Raj Mehrotra
This real life problem designs and calculates the AC amplification ratio for a Common-Emitter configuration npn type BJT.
ABACUS: Test for BJT lab Tool
06 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...
Verification of the Validity of the BJT Tool
24 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.
Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | | Contributor(s):: Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale MOSFET...
Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT
07 Mar 2010 | | Contributor(s):: Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT
Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain
Illinois ECE 440 Solid State Electronic Devices, Lecture 28&29: All Modes of BJT Operation
02 Mar 2010 | | Contributor(s):: Eric Pop
Illinois ECE 440: znipolar Junction Transistor (BJT) Homework
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.
BJT Lab: h-Parameters Calculation Exercise
07 Jul 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...