Dibya Prakash Rai
Low Temperature Enhancement of the Thermoelectric Seebeck Coefficient in Semiconductor Nanoribbons
09 Nov 2016 | | Contributor(s):: Kommini Adithya, Zlatan Aksamija
IWCE 2015 Presentation. We propose a novel approach to achieving a narrow window-shaped TDF through a combination of a step-like 2-dimensional density-of-states (DOS) and inelastic optical phonon scattering. A shift in the onset of scattering with respect to the step-like DOS creates a TDF which...
Robert Warren McKinney
ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015 | | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
1-D Phonon BTE Solver
28 Jul 2014 | | Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
Linearized Boltzmann transport calculator for thermoelectric materials
11 Jul 2013 | | Contributor(s):: Je-Hyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri
Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
25 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
27 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
27 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
ECE 656 Lecture 41: Transport in a Nutshell
20 Dec 2011 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
11 Nov 2011 | | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
ECE 656 Lecture 14: The Boltzmann Transport Equation
05 Oct 2011 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionEquation of motionThe BTESolving the s.s. BTEDiscussionSummary
Lecture 7: The Boltzmann Transport Equation
16 Aug 2011 | | Contributor(s):: Mark Lundstrom
Semi-classical carrier transport is traditionally described by the Boltzmann Transport Equation (BTE). In this lecture, we present theBTE, show how it is solved, and relate it to the Landauer Approach usedin these lectures
Introduction to Boltzmann Transport Equation
28 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
Limitations of the BTE
Manual for the Generalized Bulk Monte Carlo Tool
23 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska
This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.
Generalized Monte Carlo Presentation
17 Jun 2011 | | Contributor(s):: Dragica Vasileska
This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steady-state velocity-field characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a non-parabolic bandstructure.
Solution of the Boltzmann Equation under low-field conditions
05 Feb 2011 | | Contributor(s):: Dragica Vasileska
In this presentation it is explained clearly when one can use the relaxation approximation and when one needs to use Rode's iterative method to calculate the low-field mobility in semiconductors. At the end examples are given of the effective and Hall mobilities which, as can be seen from the...
Acoustic Phonon Scattering Explained
In this lecture notes we derive and explain acoustic deformation potential scattering as it applies to transport calculations in covalent semiconductors.