
Dibya Prakash Rai
https://nanohub.org/members/187116

Low Temperature Enhancement of the Thermoelectric Seebeck Coefficient in Semiconductor Nanoribbons
09 Nov 2016   Contributor(s):: Kommini Adithya, Zlatan Aksamija
IWCE 2015 Presentation. We propose a novel approach to achieving a narrow windowshaped TDF through a combination of a steplike 2dimensional densityofstates (DOS) and inelastic optical phonon scattering. A shift in the onset of scattering with respect to the steplike DOS creates a TDF which...

Robert Warren McKinney
https://nanohub.org/members/126777

ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015   Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate lowfield electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.

1D Phonon BTE Solver
28 Jul 2014   Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.

Linearized Boltzmann transport calculator for thermoelectric materials
11 Jul 2013   Contributor(s):: JeHyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri
Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
25 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV materials...

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
27 Jun 2013   Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collisiondominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
27 Jun 2013   Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

ECE 656 Lecture 41: Transport in a Nutshell
20 Dec 2011   Contributor(s):: Mark Lundstrom

ECE 656 Lecture 29: The BTE Revisited  Equilibrium and Ballistic
11 Nov 2011   Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

ECE 656 Lecture 14: The Boltzmann Transport Equation
05 Oct 2011   Contributor(s):: Mark Lundstrom
Outline:IntroductionEquation of motionThe BTESolving the s.s. BTEDiscussionSummary

Lecture 7: The Boltzmann Transport Equation
16 Aug 2011   Contributor(s):: Mark Lundstrom
Semiclassical carrier transport is traditionally described by the Boltzmann Transport Equation (BTE). In this lecture, we present theBTE, show how it is solved, and relate it to the Landauer Approach usedin these lectures

Heeyuen Koh
https://nanohub.org/members/56621

Introduction to Boltzmann Transport Equation
28 Jun 2011   Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.

Limitations of the BTE
28 Jun 2011   Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.

Manual for the Generalized Bulk Monte Carlo Tool
23 Jun 2011   Contributor(s):: Raghuraj Hathwar, Dragica Vasileska
This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.

Generalized Monte Carlo Presentation
17 Jun 2011   Contributor(s):: Dragica Vasileska
This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steadystate velocityfield characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a nonparabolic bandstructure.

Solution of the Boltzmann Equation under lowfield conditions
05 Feb 2011   Contributor(s):: Dragica Vasileska
In this presentation it is explained clearly when one can use the relaxation approximation and when one needs to use Rode's iterative method to calculate the lowfield mobility in semiconductors. At the end examples are given of the effective and Hall mobilities which, as can be seen from the...

Acoustic Phonon Scattering Explained
05 Feb 2011   Contributor(s):: Dragica Vasileska
In this lecture notes we derive and explain acoustic deformation potential scattering as it applies to transport calculations in covalent semiconductors.