Papers (1-4 of 4)

1. Fundamentals of Current Flow

   30 Jan 2022 | | Contributor(s):: Supriyo Datta

   Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...

2. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

   28 Jun 2013 | | Contributor(s):: Himadri Pal

   III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

3. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

   28 Jun 2013 | | Contributor(s):: Carl R. Huster

   For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

4. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

   28 Jun 2013 | | Contributor(s):: Kausar Banoo

   Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...