Tags: bottom up approach

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  1. Lecture 5: NEGF Simulation of Graphene Nanodevices

    23 Sep 2009 | | Contributor(s):: Supriyo Datta

  2. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  3. Colloquium on Graphene Physics and Devices

    22 Sep 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

  4. Lecture 1: Electronics from the Bottom Up

    22 Sep 2009 | | Contributor(s):: Supriyo Datta

  5. Lecture 2: Graphene Fundamentals

    22 Sep 2009 | | Contributor(s):: Supriyo Datta

  6. Lecture 6: Graphene PN Junctions

    22 Sep 2009 | | Contributor(s):: Mark Lundstrom

    Outline:IntroductionElectron optics in grapheneTransmission across NP junctionsConductance of PN and NN junctionsDiscussionSummary

  7. Introductory Comments

    22 Sep 2009 | | Contributor(s):: Mark Lundstrom

  8. Lecture 3: Low Bias Transport in Graphene: An Introduction

    18 Sep 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Introduction and ObjectivesTheoryExperimental approachResultsDiscussionSummaryLecture notes are available for this lecture.

  9. Lecture 1: Percolation and Reliability of Electronic Devices

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  10. Lecture 2: Threshold, Islands, and Fractals

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  11. Lecture 3: Electrical Conduction in Percolative Systems

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  12. Nanostructured Electronic Devices: Percolation and Reliability

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  13. Jul 20 2009

    2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...

    https://nanohub.org/events/details/231

  14. Lecture 2: Thresholds, Islands, and Fractals

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...

  15. Lecture 1: Percolation in Electronic Devices

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

  16. Percolation Theory

    03 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...

  17. Introductory Comments

    29 Sep 2008 | | Contributor(s):: Muhammad A. Alam

  18. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | | Contributor(s):: Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.

  19. Physics of Nanoscale MOSFETs

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

  20. Introduction: Nanoelectronics and the meaning of resistance

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...