Resources (1-6 of 6)

1. Circuit Elements

   17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

   Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

2. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

   02 Mar 2010 | | Contributor(s):: Eric Pop

3. Impedance Adder

   28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

   Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

4. Intro to MOS-Capacitor Tool

   09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

   Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

5. MOSCap

   06 Apr 2006 | | Contributor(s):: Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

   Capacitance of a MOS device

6. Series and Parallel

   17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

   Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.