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Fabrication of a MOSFET within a Microprocessor
16 Nov 2005 | | Contributor(s):: John C. Bean
This resource depicts the step-by-step process by which the transistors of an integrated circuit are made.
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Feras Al-Dirini
Feras Al-Dirini (Member, IEEE) recieved the B.Sc. degree (Hons.) in electronics engineering from Princess Sumaya University for Technology, Jordan, in 2011, and the Ph.D. degree in electrical and...
https://nanohub.org/members/37710
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History of Semiconductor Engineering
28 Jun 2006 | | Contributor(s):: Bo Lojek
When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of...
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Homework for Circuit Simulation: ECE 255
08 Jan 2006 | | Contributor(s):: Gerold Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, orsometimes check their work, by using the Spice 3F4 simulator on the nanoHUB.
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Introduction to Electronics
17 Apr 2020 | | Contributor(s):: Center for E3S, Aaron Ragsdale
Aaron Ragsdale, a former Master's student and researcher at Stanford University, leads an introductory course on common components, devices and elementary design techniques. This course consists of four modules: 1: Fundamental Variables & Electrical Components 2: Circuit...
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Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
08 Aug 2006 | | Contributor(s):: Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...
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James Curtis Belt
https://nanohub.org/members/303291
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jessica foster
I am jessica foster. I love to share new creative ideas and write blogs. Read my blogs on my page to know more.
https://nanohub.org/members/216183
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Logic Devices and Circuits on Carbon Nanotubes
05 Apr 2006 | | Contributor(s):: Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect transistors...
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MCW07 Conductance Switching in Fluorene/TiO2 Molecular Heterojunctions
13 Sep 2007 | | Contributor(s):: Richard L.McCreery
Molecular junctions consisting of a monolayer of fluorene and 10 nm of TiO2 between conducting contacts exhibit a memory effect upon positive polarization of the of the TiO2 for a few milliseconds. The junction conductance increases for a period of several minutes, but can be “erased” by a...
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MCW07 Exploring Trends in Conductance for Well-Defined Single Molecule Circuits
04 Apr 2009 | | Contributor(s):: Mark S Hybertsen
In our recent research, we have been able to measure and characterize the impact of intrinsic molecular properties on the conductance of single molecule circuits formed with amine-gold linkages. In this talk, I will review the experiments and the physical picture of the junction based on the...
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Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
21 Sep 2009 | | Contributor(s):: andrei kolmakov
Quasi 1-D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...
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Modeling and Analysis of VLSI Interconnects
10 May 2007 | | Contributor(s):: Cheng-Kok Koh
With continual technology scaling, the accurate and efficient modeling and simulation of interconnect effects have become problems of central importance. In order to accurately model the distributive effects of interconnects, it is necessary to divide a long wire into several segments, with each...
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Modeling Radiation Effects from the Component Level to the System Level
24 Oct 2023 | | Contributor(s):: Ronald Schrimpf
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Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
13 Feb 2006 | | Contributor(s):: Mark Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...
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Moore's Law Forever?
13 Jul 2005 | | Contributor(s):: Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon chip doubles every technology generation. In 1960s terms that meant every 12 months and currently...
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Multimeter
10 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.
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Multiphase Gallium Nitride Nanowires and Nanocircuits
04 Feb 2008 | | Contributor(s):: Virginia M. Ayres
Catalyst-free vapor-solid nanowire growth, a newly described method for the production of nanowires compatible with a wide variety of semiconductor materials, has been used to produce novel multiphase zinc-blende/wurtzite gallium nitride nanowires. Orientation relation-ships within the multiphase...
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Myron DSilva
https://nanohub.org/members/182103
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Nano-CMOS
06 Feb 2007 | | Contributor(s):: wei zhao, yu cao
Predictive model files for future transistor technologies.