nanoHUB could be intermittently unavailable on 05/04 from 8:00 am – 1:00 pm (EST) for scheduled maintenance. All tool sessions will expire on 05/04 at 8:00 am (EST).
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
A UCSD analytic TFET model
18 Dec 2015 | Downloads | Contributor(s): Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...
Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
08 Apr 2015 | Compact Models | Contributor(s):
By Chi-Shuen Lee1, H.-S. Philip Wong1
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...
Praveen C S
Course on Beyond CMOS Computing
06 Jun 2013 | Teaching Materials | Contributor(s): Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of...