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Dear sir, i need some simulation on CNTFET tool but it will not work properly and results are not seen
Closed | Responses: 0
Help, Error with simulation
Open | Responses: 1
I tried to simulate an LNA using Virtual-Source Carbon Nanotube Field-Effect Transistor using HSPICE 2008,03 but it gave me this error " hsp-vacomp: Error:...
how many are there cntfet simulation methodes?
1-how many are there cntfet simulation methodes?
2-whats resourse for there?
3-i want to know about CNTFET with slice gate structre.
how to start modelling and simulation based work on CNTFET devices?
how we obtain the id-vd characterstics of planer cntfet
how we obtain the id-vd characterstics of planer cntfet in cntlab by changing the parameters
The electrical field from the gate of CNFET can not affect the transistor.
Open | Responses: 2
I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...
where is exactly this carbon nano tubes are used ???
which is advantageous either the cnt electromechanical memory or the cntfet memory?
whats the advantage and disadvantages of
1.the cnt electromechanical memory
2.the cntmosfet memory
what can be the possible solution for the current situation of nonvolatile ram?
A CNTFET-Based Nanowired Induction Two-Way Transducers
05 Sep 2012 | | Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...
24 Sep 2013 |
Posted by Tanya Faltens
Here is an explanation from Emily on the mysterious creation of links, and how to avoid it with a leading bang.
This is actually a feature in the wiki called CamelCase. This is the...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
26 Apr 2009 | | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
CNTbands: First-Time User Guide
14 Jun 2009 | | Contributor(s):: Xufeng Wang, Youngki Yoon
This is a simple guide designed for first-time users of CNTbands. It gives a brief introduction of the tool and a series of tutorials to help users learn the basics of CNTbands.NCN@Purdue
13 Mar 2006 | | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
Cory D. Cress
Cylindrical CNT MOSFET Simulator
22 Jul 2008 | | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...