Tags: CV curves

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  1. SCALE Summer 2023 Research (ASU)

    19 Sep 2023 | | Contributor(s):: Esteban Chacon

  2. JFETlab: An Online Simulation Tool for Double Gate long channel Symmetrical Si and 4H-SiC JFETs

    19 Dec 2016 | | Contributor(s):: Nikolaos Makris, Matthias Bucher, Farzan Jazaeri

    JFETlab is a simulation tool of static and dynamic electrical characteristics ( I-V, G-V, C-V ) of Si and 4H-SiC Junction Field Effect Transistors (JFETs) using temperature and channel concentration depedent material models.

  3. MEMSLab

    05 Jun 2013 | | Contributor(s):: Oluwatosin Adeosun, Sambit Palit, Ankit Jain, Muhammad Alam, Xin Jin

    Simulation suite for electromechanical actuators

  4. ECE 695A Lecture 17R: Review Questions

    01 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...

  5. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  6. Keithley 4200-SCS Lecture 12: Ultra-fast I-V for Pulsed and Transient Characterization

    24 Jan 2011 | | Contributor(s):: Lee Stauffer

  7. Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

    Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.

  8. Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

  9. Keithley 4200-SCS Lecture 03: More KITE Setup and Features

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

  10. Keithley 4200-SCS Lecture 04: Speed and Timing Considerations

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

  11. Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

  12. Keithley 4200-SCS Lecture 06: Troubleshooting

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

  13. Keithley 4200-SCS Lecture 07: KCON Utility Overview

    18 Jan 2011 | | Contributor(s):: Lee Stauffer

  14. Keithley 4200-SCS Lecture 08: 4210 CVU Instrument Module - Overview

    18 Jan 2011 | | Contributor(s):: Lee Stauffer

    Theory of Operation and Measurement Overview

  15. Keithley 4200-SCS Lecture 09: 4210 CVU Instrument Module - Measurement Techniques I

    18 Jan 2011 | | Contributor(s):: Lee Stauffer

    Measurement Techniques and Optimization

  16. Keithley 4200-SCS Lecture 10: 4210 CVU Instrument Module - Measurement Techniques II

    18 Jan 2011 | | Contributor(s):: Lee Stauffer

    Measurement Techniques and Optimization

  17. Keithley 4200-SCS: KITE Demo

    18 Jan 2011 | | Contributor(s):: Lee Stauffer

  18. Keithley 4200-SCS Lecture 11: 4210 CVU Instrument Module - Troubleshooting

    19 Jan 2011 | | Contributor(s):: Lee Stauffer

  19. Device Characterization with the Keithley 4200-SCS

    12 Jan 2011 | | Contributor(s):: Lee Stauffer

    This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument, as well as general measurement considerations.

  20. CV profile with different oxide thickness

    10 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.C-V measurements can...