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Windows based Interactive tool for the simulation of the MOS electrostatics
26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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MOS Simulator
25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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how does my C-V varies with leaky dielectric??
Q&A|Closed | Responses: 0
If i have a leaky HfO2 based dielectric,and I am measuring its capacitance value in its accumulation regime, Can...
https://nanohub.org/answers/question/497